View TDA1561Q_891853.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

INTEGRATED CIRCUITS
DATA SHEET
TDA1561Q 2 x 23 W high efficiency car radio power amplifier
Preliminary specification Supersedes data of 1997 Jun 11 File under Integrated Circuits, IC01 1997 Aug 14
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
FEATURES * Low dissipation due to switching from Single-Ended (SE) to Bridge-Tied Load (BTL) mode * High Common Mode Rejection Ratio (CMRR) * Mute/standby/operating/SE-only (mode select pin) * Zero crossing mute and standby circuit * Load dump protection circuit * Short-circuit safe to ground, to supply voltage and across load * Loudspeaker protection circuit * Device switches to single-ended operation at excessive junction temperatures. QUICK REFERENCE DATA SYMBOL VP PARAMETER supply voltage CONDITIONS DC biased non operating load dump IORM Iq(tot) Istb Zi Po Gv CMRR SVRR VO cs Gv repetitive peak output current total quiescent current standby current input impedance output power voltage gain common mode rejection ratio supply voltage ripple rejection DC output offset voltage channel separation channel unbalance Rs = 0 k f = 1 kHz; Rs = 0 f = 1 kHz; Rs = 0 RL = 4 ; EIAJ THD 10% RL = MIN. 6.0 - - - - - - - 21 31 - 45 - 40 - GENERAL DESCRIPTION
TDA1561Q
The TDA1561Q is a monolithic power amplifier in a 13 lead single-in-line (SIL) plastic power package. It contains two identical 23 W amplifiers. The dissipation is minimized by switching from SE to BTL mode, only when a higher output voltage swing is needed. The device is primarily developed for car radio applications.
TYP. 14.4 - - - 95 1 60 36 23 32 80 55 - 60 -
MAX. 18 30 50 4 150 50 - - - 33 - - 150 - 1
UNIT V V V A mA A k W W dB dB dB mV dB dB
ORDERING INFORMATION TYPE NUMBER TDA1561Q PACKAGE NAME DBS13P DESCRIPTION plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) VERSION SOT141-6
1997 Aug 14
2
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
BLOCK DIAGRAM
TDA1561Q
handbook, full pagewidth
VP 7 MUTE
IN1
1
6 OUT1 5 R OUT1
CIN
12
1/2R
REFERENCE SOURCES MUTE/STANDBY
THERMAL/ SHORT-CIRCUIT PROTECTION
HIGHER TEMPERATURE BTL DISABLE
0.5VP
11
C 11
MODE HVP
3 9 2 OUT2 R 8 OUT2
IN2
13
TDA1561Q
MUTE 4 GND1 10 GND2
MLD214
Fig.1 Block diagram.
1997 Aug 14
3
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
PINNING SYMBOL IN1 HVP MODE GND1 OUT1 OUT1 VP OUT2 OUT2 GND2 C11 CIN IN2 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 input 1 half supply voltage control input mute/standby/operating/SE-only ground 1 inverting output 1 non-inverting output 1 supply voltage inverting output 2 non-inverting output 2 ground 2 electrolytic capacitor for single-ended (SE) mode common input input 2
handbook, halfpage
TDA1561Q
DESCRIPTION
IN1 HV P MODE GND1 OUT1 OUT1 VP OUT2 OUT2
1 2 3 4 5 6 7 8 9
TDA1561Q
GND2 10 C 11 11
CIN 12 IN2 13
MLD215
Fig.2 Pin configuration.
1997 Aug 14
4
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
FUNCTIONAL DESCRIPTION The TDA1561Q contains two identical amplifiers with differential inputs. At low output power (up to output amplitudes of 3 V (RMS) at VP = 14.4 V), the device operates as a normal SE amplifier. When a larger output voltage swing is needed, the circuit switches internally to BTL operation. With a sine wave input signal the dissipation of a conventional BTL amplifier up to 2 W output power is more than twice the dissipation of the TDA1561Q (see Fig.9). In normal use, when the amplifier is driven with music-like signals, the high (BTL) output power is only needed for a small percentage of time. Under the assumption that a music signal has a normal (Gaussian) amplitude distribution, the dissipation of a conventional BTL amplifier with the same output power is approximately 70% higher (see Fig.10). The heatsink has to be designed for use with music signals. With such a heatsink, the thermal protection will disable the BTL mode when the junction temperature exceeds 145 C. In this case the output power is limited to 5 W per amplifier. The gain of each amplifier is internally fixed at 32 dB. With the MODE pin, the device can be switched to the following modes: * Standby with low standby current (<50 A) * Mute condition, DC adjusted * On, operation * SE-only, operation (BTL disabled).
TDA1561Q
The device is fully protected against short-circuiting of the output pins to ground and to the supply voltage. It is also protected against short-circuiting the loudspeaker and high junction temperatures. In the event of a permanent short-circuit condition to ground or the supply voltage, the output stage will be switched off causing a low dissipation. With permanent short-circuiting of the loudspeaker, the output stage will be repeatedly switched on and off. The duty cycle in the `on' condition is low enough to prevent excessive dissipation. To avoid plops during switching from `mute' to `on' or from `on' to `mute/standby' while an input signal is present, a built-in zero-crossing detector allows only switching at zero input voltage. However, when the supply voltage drops below 6 V (e.g. engine start), the circuit mutes immediately avoiding clicks coming from electronic circuitry preceding the power amplifier. The voltage of the SE electrolytic capacitor (pin 11) is always kept at 0.5VP by means of a voltage buffer (see Fig.1). The value of this capacitor has an important influence on the output power in SE mode, especially at low signal frequencies, a high value is recommended to minimize dissipation at low frequencies.
1997 Aug 14
5
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VP PARAMETER supply voltage CONDITIONS operating non operating load dump; tr > 2.5 ms VP(sc) Vrp IOSM IORM Ptot Tstg Tvj Tamb short-circuit safe voltage reverse polarity voltage non-repetitive peak output current repetitive peak output current total power dissipation storage temperature virtual junction temperature operating ambient temperature - - - - - - - - -55 - -40 MIN.
TDA1561Q
MAX. 18 30 50 18 6 6 4 60 +150 150 - V V V V V A A
UNIT
W C C C
THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) Note 1. The value of Rth(c-h) depends on the application (see Fig.3). PARAMETER thermal resistance from junction to case thermal resistance from junction to ambient CONDITIONS see note 1 VALUE 1.3 40 UNIT K/W K/W
1997 Aug 14
6
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
Heatsink design There are two parameters that determine the size of the heatsink. The first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the BTL mode. With a conventional BTL amplifier, the maximum power dissipation with a music-like signal (at each amplifier) will be approximately two times 5 W. At a virtual junction temperature of 150 C and a maximum ambient temperature of 60 C, Rth(vj-c) = 1.3 K/W and Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink 150 - 60 should be: --------------------- - 1.3 - 0.2 = 7.5 K/W 2x5
0.1 K/W
handbook, halfpage
TDA1561Q
virtual junction OUT 1 OUT 2 OUT 2
OUT 1
3.6 K/W
3.6 K/W 3.6 K/W
3.6 K/W
0.6 K/W
0.6 K/W
MGC424
Compared to a conventional BTL amplifier, the TDA1561Q has a higher efficiency. The thermal resistance of the heatsink should be: 150 - 60 1.7 --------------------- - 1.3 - 0.2 = 13.8 K/W 2 x 5 -
case
Fig.3 Thermal equivalent resistance network.
1997 Aug 14
7
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 C; measured in Fig.6; unless otherwise specified. SYMBOL Supplies VP Iq Istb VC VO supply voltage quiescent current standby current average electrolytic capacitor voltage at pin 11 DC output offset voltage on state mute state Mode select switch (see Fig.4) Vms voltage at mode select pin (pin 3) standby condition mute condition on condition (SE/BTL mode) on condition (SE mode only) Ims Protection Tdis Note 1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP = 8 to 18 V. BTL disable temperature - 145 switch current through pin 3 Vms = 5 V 0 2 4 7.5 - - - - - - note 1 RL = 6.0 - - - - - 14.4 95 1 7.1 - - PARAMETER CONDITIONS MIN. TYP.
TDA1561Q
MAX.
UNIT
18.0 150 50 - 150 50
V mA A V mV mV
1 3 5.5 VP 40 -
V V V V A C
V halfpage handbook, P SE Only 8 7 6 5 4 3 Mute 2 1 Standby 0
MLD216
SE/BTL
Fig.4 Switching levels of mode select switch.
1997 Aug 14
8
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TDA1561Q
AC CHARACTERISTICS VP = 14.4 V; RL = 4 ; C11 = 1000 F; f = 1 kHz; Tamb = 25 C; measured in Fig.6; unless otherwise specified. SYMBOL Po PARAMETER output power CONDITIONS THD = 1% THD = 10% EIAJ VP = 13.2 V; THD = 0.5% VP = 13.2 V; THD = 10% THD Pd Bp fro(l) fro(h) Gv SVRR total harmonic distortion dissipated power power bandwidth low frequency roll-off high frequency roll-off closed loop voltage gain supply voltage ripple rejection Rs = 0 ; Vripple = 2 V (p-p) on; f = 1 kHz mute; f = 1 kHz CMRR Zi Zi VSE-BTL Vout Vn(o) common mode rejection ratio input impedance mismatch in input impedance SE to BTL switch voltage level output voltage-mute (RMS value) noise output voltage note 3 Vi = 1 V (RMS) on; Rs = 0 ; note 4 on; Rs = 10 k; note 4 mute; note 5 cs Gv Notes 1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz. 2. Frequency response externally fixed (input capacitors determine low frequency roll-off). 3. The SE to BTL switch voltage level depends on VP. 4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage is independent of Rs (see Fig.6)(Vi = 0 V). channel separation channel unbalance Rs = 0 Rs = 0 ; f = 1 kHz 45 - - 45 - - - - - - 40 - 60 90 - 80 60 1 3 50 160 170 20 60 - - - - - 75 - - 100 300 - - - 1 dB dB dB dB k % V V V V V dB dB THD = 1%; Po = -1 dB with respect to 15 W -1 dB; note 2 -1 dB - - 130 31 Po = 1 W; f = 1 kHz; note 1 MIN. 15 21 - - - - TYP. 18 23 36 14 20 0.1 20 to 15 000 25 - 32 MAX. - - - - - - - - - 33 UNIT W W W W W % W Hz Hz kHz dB
see Figs 9 and 10
standby; f = 100 Hz to 10 kHz 80
1997 Aug 14
9
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TEST AND APPLICATION INFORMATION
TDA1561Q
handbook, full pagewidth
MODE 3 Rs input 1 IN1 220 nF 1
VP 7
1000 F 16 V
220 nF
6
OUT1 10 nF 4 3.9
5 HVP 2
OUT1 100 nF 3.9
11 C11 0.5Rs CIN 470 nF 12 0.5VP 9 OUT2 1000 F (16 V)
10 nF
100 nF 3.9
TDA1561Q
8 IN2 13 220 nF 4 GND1 10 GND2
MLD223
4 OUT2
3.9
Rs input 2
Fig.5 Test diagram.
1997 Aug 14
10
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TDA1561Q
handbook, full pagewidth
(1)
MODE 3 Rs IN1 220 nF 1
VP 7
1000 F 16 V
100 nF
6
OUT1 10 nF 4 3.9
5 HVP 100 nF 11 0.5Rs CIN 12 0.5VP 9 2
OUT1 100 nF 3.9 C11 1000 F (16 V) 10 nF 100 nF 3.9
2 x 220 nF OUT2
TDA1561Q
8 IN2 220 nF 4 GND1 10 GND2
MLD213
4 OUT2
3.9
Rs
13
signal ground power ground
Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection.
Fig.6 Application diagram.
1997 Aug 14
11
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TDA1561Q
handbook, full pagewidth
86.36
43.18
GND
gnd
Vp Cool Power m s 4 x 220 nF Out 1 Out 2 In1 sgnd In2 s m
Mode select
TDA1561Q
MGK182
Dimensions in mm.
Fig.7 PCB layout (component side) for the application of Fig.6.
1997 Aug 14
12
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TDA1561Q
handbook, full pagewidth
86.36
43.18
gnd
GND
Mode
Vp
m Out2
s
s Out1
m
In2
sgnd
In1
MGK183
Dimensions in mm.
Fig.8 PCB layout (soldering side) for the application of Fig.6.
1997 Aug 14
13
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
INTERNAL PIN CONFIGURATIONS PIN 1,12,13 NAME IN1, CIN, IN2
h
TDA1561Q
EQUIVALENT CIRCUIT
VP pin 12
pin 1
pin 13
MLD217
2
HVP
handbook, halfpage
pin 2
MLD218
3
MODE
handbook, halfpage
VP
pin 3
MLD221
1997 Aug 14
14
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
PIN 5, 9 NAME OUT1, OUT2
handbook, halfpage
TDA1561Q
EQUIVALENT CIRCUIT
VP
pins 5, 9
MLD220
6, 8
OUT1, OUT2
handbook, halfpage
VP
pins 6, 8
MLD219
11
C11
MLD222
pin 11
1997 Aug 14
15
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
ADDITIONAL APPLICATION INFORMATION
TDA1561Q
handbook, halfpage
25 Pd (W)
MBH692
handbook, halfpage
25 Pd (W)
MBH693
20
(1)
20
(1)
15
(2)
15
10
10
(2)
5
5
0 0 2 4 6 8 Po (W) 10
0 0 2 4 6 8 Po (W) 10
Input signal 1 kHz, sinusoidal; VP = 14.4 V. (1) For a conventional BTL amplifier. (2) For TDA1561Q.
(1) For a conventional BTL amplifier. (2) For TDA1561Q.
Fig.9 Dissipation; sine wave driven.
Fig.10 Dissipation; pink noise through IEC-268 filter.
430
2.2 F
330
2.2 F
470 nF
input
3.3 k
91 nF
3.3 k
68 nF
10 k
output
MGC428
Fig.11 IEC-268 filter.
1997 Aug 14
16
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TDA1561Q
handbook, full pagewidth
on condition MODE 3 IN1 1 220 nF
VP 7 6 OUT1 10 nF 4 5 OUT1 100 nF 3.9 11 C11 3.9
HVP 2 100 nF IEC-268 FILTER pink noise CIN 2x 220 nF 12 1/2VP 9 OUT2
1000 F (16 V) 10 nF 100 nF 3.9
TDA1561Q
8 IN2 13 4 GND1 10 GND2
MGC427
4 OUT2
3.9
220 nF
Fig.12 Test and application diagram for dissipation measurements with a music-like signal (pink noise).
handbook, halfpage
12
MBH694
handbook, halfpage
125
MBH695
VO (V) 8
Iq (mA)
100
75
50 4 25
0 0 8 16 VP (V) 24
0 0 Vms = 5 V; RI = . 8 16 VP (V) 24
Vms = 5 V.
Fig.13 DC output voltage as a function of VP.
Fig.14 Quiescent current as a function of VP.
1997 Aug 14
17
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TDA1561Q
handbook, halfpage
160
MBH696
handbook, halfpage
IP (mA) 120
80 IMODE (A) 64
MBH697
48 80 SE/BTL SE only 32 40
off
mute
16
0 0 2 4 6 8 VMODE (V)
0 0 2 4 6 8 VMODE (V)
VP = 14.4 V; Vin = 0 mV; RI = .
Fig.15 IP as a function of Vms (pin 3).
Fig.16 Ims as a function of Vms.
handbook, halfpage
60
MBH698
102 handbook, halfpage THD + N (%)
MBH699
Po (W) 40
(2) (3) (1)
10
1
(1)
20 10-1
(2)
(3)
0 8.4
10.8
13.2
15.6
VP (V)
18
10-2 -2 10
10-1
1
10
Po (W)
102
Both channels driven. (1) EIAJ. (2) THD = 10%. (3) THD = 1%.
(1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz.
Fig.17 Output power as a function of VP.
Fig.18 THD + noise as a function of Po.
1997 Aug 14
18
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TDA1561Q
handbook, halfpage
10
MBH700
handbook, halfpage
20
MBH701
THD + N (%) 1
Bp (W)
(1) (2)
18
16
(1)
10-1
14
(2)
12
10-2 10
102
103
104
f (Hz)
105
10 10
102
103
104 f (Hz) 105
(1) Po = 10 W. (2) Po = 1 W.
(1) For OUT2. (2) For OUT1.
Fig.19 THD + noise as a function of frequency.
Fig.20 Power bandwidth at THD = 1%.
handbook, halfpage
36 Gv (dB) 34
MBH702
handbook, halfpage
-20
MBH703
SVRR
(dB) -40
on
32
-60
30
-80
mute
28
-100
off
26 10
102
103
104
105
f (Hz)
106
-120 10
102
103
104 f (Hz) 105
Vin = 50 mV.
Vripple(p-p) = 2 V.
Fig.21 Gain as a function of frequency.
Fig.22 SVRR as a function of frequency.
1997 Aug 14
19
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TDA1561Q
handbook, halfpage
0
MBH704
cs (dB)
-20
-40
(1)
handbook, halfpage
5 V/40 A
10 k
MODE 47 F
-60
(2)
MBH690
-100 10
102
103
104 f (Hz) 105
(1) Po = 1 W. (2) Po = 10 W.
Fig.23 Channel separation as a function of frequency.
Fig.24 Mode select circuit.
1997 Aug 14
20
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
TDA1561Q
handbook, full pagewidth
(1) VP Vload
(2)
(3)
MBH691
0
-VP VP Vmaster 1/2 VP
0 VP Vslave 1/2 VP
0
0
1
2
t (ms)
3
See Fig.5: Vload = V6 - V5 or V8 - V9 Vmaster = V6 or V8 Vslave = V5 or V9
Fig.25 Output waveforms.
1997 Aug 14
21
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
PACKAGE OUTLINE DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)
TDA1561Q
SOT141-6
non-concave x D Dh
Eh
view B: mounting base side
d
A2
B j E A
L3
L
Q c vM
1 Z e e1 bp wM
13 m e2
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 17.0 15.5 A2 4.6 4.2 bp 0.75 0.60 c 0.48 0.38 D (1) 24.0 23.6 d 20.0 19.6 Dh 10 E (1) 12.2 11.8 e 3.4 e1 1.7 e2 5.08 Eh 6 j 3.4 3.1 L 12.4 11.0 L3 2.4 1.6 m 4.3 Q 2.1 1.8 v 0.8 w 0.25 x 0.03 Z (1) 2.00 1.45
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT141-6 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-03-11 97-12-16
1997 Aug 14
22
Philips Semiconductors
Preliminary specification
2 x 23 W high efficiency car radio power amplifier
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA1561Q
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds.
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Aug 14
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
547027/1200/05/pp24
Date of release: 1997 Aug 14
Document order number:
9397 750 02732

▲Up To Search▲

Price & Availability of TDA1561Q

	To Download TDA1561Q Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .